1 J

500 600 700 800 900 1000 Substrate temperature Ts 1°C

600 700 800 900 1000 Substrate temperature T, l"C

500 600 700 800 900 1000 Substrate temperature Ts 1°C

Figure 3. Dependence of residual stress on the substrate temperature 7\

a: La]sSrCr03

The dependence of the residual stresses in the films on the substrate temperature T is shown in Fig.3. Assuming the intrinsic stresses are constant for all kind of substrates within this temperature range, TEC and amof the film can be estimated from the £/(l-v() and the dependence of average slopes A at ATt on the TEC of the substrate. The result of this estimation is shown in table 3. The difference between TEC of LaI xSrxCr03 films obtained from this measurement and that of balk La^Sr^CrO, in reductive atmosphere (4)is relatively small. TEC of LalxSrMn03 films, which is approximately 1.5 times bigger than that of bulk La, xSrMn03in airl5', shows same tendency as the TEC in reductive atmosphere reported by Mizusaki et al.(il, although the accuracy of measurement and dependence of

Table 3. The estimation of material properities and intrinsic stresses.
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